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BCX54...BCX56
NPN Silicon AF Transistors
For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX51...BCX53 (PNP)

1 2 3
2
VPS05162
Type BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16
Marking BA BC BD BE BG BM BH BK BL 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E
Package SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89
1
Jul-10-2001
BCX54...BCX56
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol VCEO VCBO VEBO BCX54 45 45 5 BCX55 60 60 5 BCX56 80 100 5 Unit V
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
1 1.5 100 200 1 150 -65 ... 150
A mA W C
Thermal Resistance Junction - soldering point 1) RthJS
20
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Jul-10-2001
BCX54...BCX56
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX54 BCX55 BCX56 Collector-base breakdown voltage IC = 100 A, IB = 0 BCX54 BCX55 BCX56 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V BCX54...56 hFE-grp.10 hFE-grp.16 DC current gain 1) IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) 1 VCEsat 0.5 hFE hFE 40 63 100 25 100 160 250 160 250 hFE 25 ICBO 20 ICBO 100 V(BR)EBO V(BR)CBO 45 60 100 5 V(BR)CEO 45 60 80 typ. max.
Unit
V
nA A -
V
AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz
1) Pulse test: t =300s, D = 2%
fT
-
100
-
MHz
3
Jul-10-2001
BCX54...BCX56
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC) VCE = 10V
10 3 MHz
BCX 54...56 EHP00445
1.2
W
fT
5
P tot
0.8
0.6
10 2
0.4
5
0.2
0 0
15
30
45
60
75
90 105 120 C
150
10 1 10 0
5 10 1
5
10 2
mA
10 3
TS
C
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCX 54...56 EHP00446
Collector cutoff current ICBO = f (T A) VCB = 30V
10 4 nA
BCX 54...56 EHP00447
D=
tp T
tp T
CB0
10 3 5
max
10 5
2
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2 5 10 1 5 10 5
0
typ
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 -1
0
50
100
C TA
150
4
Jul-10-2001
BCX54...BCX56
Collector current IC = f (VBE) VCE = 2V
10 4 mA
BCX 54...56 EHP00448
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
4 BCX 54...56 EHP00449
10 mA
C
10 5
3
C
10
3
100 C 25 C -50 C
5 100 C 25 C -50 C
10 2 5
10 5
2
10 5
1
10 5
1
10 0
0
0.2
0.4
0.6
0.8
1.0 V 1.2 VBE
10
0
0
0.2
0.4
0.6
V
0.8
VCE sat
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 4 mA
BCX 54...56 EHP00450
DC current gain hFE = f (I C) VCE = 2V
BCX 54...56 EHP00451
10 3 5
C
10 5
3
h FE
100 C
100 C 25 C -50 C
2
10 2 5
25 C -50 C
10 5
10 1
10
1
5
5
10 0
0
0.2
0.4
0.6
0.8
1.0 V 1.2 VBE sat
10 0 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
C
5
Jul-10-2001

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